Transition Temperature of a Magnetic Semiconductor with Angular Momentumj

Transition temperature of a magnetic semiconductor with angular momentum j.

We employ dynamical mean-field theory to identify the materials properties that optimize T(c) for a generalized double-exchange model. We reach the surprising conclusion that T(c) achieves a maximum when the band angular momentum j equals 3/2 and when the masses in the m(j) = +/- 1/2 and +/-3/2 and subbands are equal. However, we also find that T(c) is significantly reduced as the ratio of the ...

Temperature-driven transition from a semiconductor to a topological insulator

A room-temperature magnetic semiconductor from a ferromagnetic metallic glass

Emerging for future spintronic/electronic applications, magnetic semiconductors have stimulated intense interest due to their promises for new functionalities and device concepts. So far, the so-called diluted magnetic semiconductors attract many attentions, yet it remains challenging to increase their Curie temperatures above room temperature, particularly those based on III-V semiconductors. ...

Transition Metal-Doped Oxide Semiconductor Exhibiting Room-Temperature Ferromagnetism

Local magnetic and structural properties of the low-temperature orthorhombic to low-temperature tetragonal transition: A

La nuclear quadrupole resistance ~NQR! and relaxation measurements in lightly hole-doped La1.82xEu0.2SrxCuO4 have been used to investigate the microscopic properties of the low-temperature orthorhombic to low-temperature tetragonal transition. The transition is characterized by a sharp peak in La NQR relaxation rate, indicating phonon softening. We find that the structural phase transition is a...